UMC4N-7 Diodes Inc, UMC4N-7 Datasheet - Page 2

• Manufacturer Part Number: UMC4N-7
• Description: TRANS ARRAY DUAL 100MA SOT-353
• Manufacturer: Diodes Inc

Specifications of UMC4N-7

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMC4N-7; UMC4N-7DITR

Electrical Characteristics, Pre-Biased NPN Transistor, Q
Electrical Characteristics, Pre-Biased PNP Transistor, Q
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
*Characteristic of Transistor – for reference only.
*Characteristic of Transistor – for reference only.
DS31203 Rev. 3 - 2
Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN)
1,000
100
10
1
T = 85°C
A
Characteristic
Characteristic
T = 150°C
A
I , OUTPUT CURRENT (mA)
O
T = -55°C
A
T = 25°C
A
V = 5V
O
Symbol
Symbol
V
V
R
R
V
V
I
V
V
I
O(off)
O(off)
O(on)
O(on)
R
2
R
2
I(on)
G
I(on)
G
I(off)
f
I(off)
f
I
I
/R
/R
T
T
I
I
1
1
I
I
1
1
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32.9
Min
Min
-1.4
2 of 4
0.8
3.7
68
68
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
7
Typ
Typ
-0.1
250
250
0.1
4.7
47
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
0.1
2 @T
1 @T
-0.88
Max
Max
0.18
61.1
-0.3
-0.3
-0.5
0.5
0.3
0.5
1.2
5.7
13
⎯
⎯
⎯
⎯
⎯
⎯
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
MHz
MHz
Unit
Unit
mA
mA
μA
kΩ
μA
kΩ
⎯
⎯
⎯
⎯
V
V
V
V
V
V
T = 85°C
1
A
T = -55°C
V
V
I
V
V
V
V
V
V
I
V
V
V
V
A
O
O
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
/ I
/ I
= 5V
= -5V
= 0.3V, I
= 5V, I
= -0.3V, I
= -5V, I
I
I
= 10V, I
= -10V, I
= 5V, I
= 50V, V
= -5V, I
= -50V, V
= 10mA/0.5 mA
= -5mA/-0.25 mA
T = 150°C
A
O
Test Condition
Test Condition
10
O
T = 25°C
O
O
= 5mA
O
A
E
O
= -5mA
= 100μA
E
I
= 2mA
= -100μA
= -5mA, f = 100MHz*
I
= 0V
= -1mA
= 5mA, f = 100MHz*
= 0V
⎯
⎯
⎯
⎯
I /I = 20
O I
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100
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