XN0F26300L Panasonic - SSG, XN0F26300L Datasheet
XN0F26300L
Manufacturer Part Number
XN0F26300L
Description
TRANS ARRAY NPN/NPN W/RES MINI-6
Manufacturer
Panasonic - SSG
Datasheet
1.XN0F26300L.pdf
(2 pages)
Specifications of XN0F26300L
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
15V
Resistor - Base (r1) (ohms)
270
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
50mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
Mini 6P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Other names
XN0F26300LTR
Composite Transistors
XN0F263
Silicon NPN epitaxial planar type
For muting
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
• Two elements incorporated into one package (collector-coupled
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
transistors with built-in resistor)
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
V
V
V
CEO
EBO
a
I
I
stg
C
CE(sat)
T
h
CBO
j
EBO
R
f
= 25°C
CBO
CEO
EBO
FE
T
1
CE(sat)
−55 to +150
Rating
I
I
I
V
V
V
I
V
C
C
E
C
600
300
150
CB
EB
CE
CB
20
15
= 1 µA, I
= 1 µA, I
= 1 mA, I
= 50 mA, I
5
SJJ00307AED
= 5 V, I
= 5 V, I
= 10 V, I
= 20 V, I
C
E
B
C
C
Conditions
Unit
= 0
= 0
B
E
mW
E
mA
= 0
= 0
= 50 mA
°C
°C
V
V
V
= −50 mA, f = 200 MHz
= 2.5 mA
= 0
Marking Symbol: 2H
Internal Connection
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
10˚
EIAJ: SC-74
0.30
0.50
4
3
(0.95)
+0.10
–0.05
+0.10
–0.05
2.90
2
1.9
5
+0.20
–0.05
±0.1
(0.95)
Min
100
200
20
15
(B2) (N.C.) (B1)
Tr2
(E2)
5
6
1
4
3
(C)
Typ
270
200
2
5
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
(E1)
Tr1
Mini6-G1 Package
6
1
Max
600
325
50
0.16
1
1
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
µA
V
V
V
Ω
1
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