SI8233AB-C-IM Silicon Laboratories Inc, SI8233AB-C-IM Datasheet - Page 13
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SI8233AB-C-IM
Manufacturer Part Number
SI8233AB-C-IM
Description
2.5KV 4A HIGH SIDE/LOW SIDE ISOLATED DRIVER ("ISODRIVER"), D
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI8234BB-C-IS1.pdf
(52 pages)
Specifications of SI8233AB-C-IM
Configuration
High and Low Side, Independent
Input Type
Non-Inverting
Delay Time
60ns
Current - Peak
4A
Number Of Configurations
2
Number Of Outputs
4
High Side Voltage - Max (bootstrap)
1500V
Voltage - Supply
6.5 V ~ 24 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-VFLGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI8233AB-C-IM
Manufacturer:
SILICONLAP
Quantity:
605
Table 6. IEC 60747-5-2 Insulation Characteristics*
Table 7. IEC Safety Limiting Values
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE
0110, Table 1)
Insulation Resistance at T
V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si823x provides a climate classification of
Parameter
Case Temperature
Safety Input Current
Device Power
Dissipation
Notes:
IO
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 6 and 7.
2. The Si82xx is tested with V
= 500 V
40/125/21.
square wave.
Parameter
2
Symbol
P
T
I
S
S
D
S
,
105 °C/W (NB SOIC-16, 14 LD LGA),
DDI
Symbol
50 °C/W (14 LD LGA w/ Pad)
JA
V
V
V
IORM
IOTM
R
= 5.5 V, V
T
= 100 °C/W (WB SOIC-16),
PR
S
J
V
= 150 °C, T
DDA
Test Condition
V
1
DDI
(V
= V
Partial Discharge < 5
DDA
IORM
= 5.5 V,
Production Test,
DDB
Test Condition
= V
Method b1
t
A
t = 60 sec
m
= 24 V,
x 1.875 = V
= 25 °C
100%
= 1 sec,
DDB
pC)
Rev. 1.1
= 24 V, T
PR
J
,
= 150 ºC, C
SOIC-16
WB
150
SOIC-16
1.2
50
1375
6000
>10
WB
891
2
9
L
SOIC-16
= 100 pF, input 2 MHz 50% duty cycle
150
NB
1.2
Characteristic
50
NB SOIC-16
14 LD LGA
1050
4000
>10
560
2
LD LGA
9
150
1.2
50
14
14 LD LGA
w/ Pad
2650
>10
LGA w/
373
700
14 LD
Pad
2
150
100
1.2
Si823x
9
V peak
V peak
V peak
Unit
Unit
mA
°C
W
13