QS3306AS1G Integrated Device Technology (Idt), QS3306AS1G Datasheet - Page 3
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QS3306AS1G
Manufacturer Part Number
QS3306AS1G
Description
Bus Switch 2-Element 1-IN 8-Pin SOIC Tube
Manufacturer
Integrated Device Technology (Idt)
Datasheet
1.IDTQS3306AS1G8.pdf
(5 pages)
Specifications of QS3306AS1G
Package
8SOIC
Configuration
1 x 1:1
Logic Function
Bus Switch
Number Of Outputs Per Chip
2
Typical Operating Supply Voltage
5 V
Maximum On Resistance
10(Typ) Ohm
Maximum High Level Output Current
-120 mA
Maximum Low Level Output Current
120 mA
Maximum Operating Supply Voltage
5.25 V
Minimum Operating Supply Voltage
4.75 V
Maximum Propagation Delay Time @ Maximum Cl
0.25@5V ns
TYPICAL ON RESISTANCE vs V
NOTES:
1. Typical values are at V
2. R
3. Pass voltage is guaranteed but not production tested.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
IDTQS3306A
HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ENABLES
Symbol
R
V
I
V
ON
V
I
OZ
IN
ON
(ohms)
IH
IL
P
R
is guaranteed but not production tested.
ON
A
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current (Control Inputs)
Off-State Current (Hi-Z)
Switch ON Resistance
Pass Voltage
= –40°C to +85°C, V
16
14
12
10
8
6
4
2
0
CC
0.0
(3)
= 5V and T
Parameter
(2)
CC
A
= 25°C.
= 5V ± 5%
0.5
1.0
Guaranteed Logic HIGH for Control Pins
Guaranteed Logic LOW for Control Pins
0V ≤ V
0V ≤ V
V
V
V
CC
CC
IN
= V
= Min., V
= Min., V
IN
IN
OUT
CC
≤ V
= 5V, I
AT V
≤ V
CC
IN
IN
CC
1.5
= 0V, I
= 2.4V, I
, Switches OFF
OUT
(Volts)
CC
Test Conditions
= -5μA
V
3
ON
IN
ON
= 30mA
= 5V
= 15mA
2.0
2.5
INDUSTRIAL TEMPERATURE RANGE
3.0
Min.
3.7
—
—
—
—
—
2
Typ.
3.5
—
—
—
—
10
5
4
(1)
Max.
0.8
4.2
±1
±1
—
15
7
Unit
µ A
µ A
Ω
V
V
V