MUN5213DW1T1G ON Semiconductor, MUN5213DW1T1G Datasheet - Page 3

TRANS BRT NPN DUAL 50V SOT-363

MUN5213DW1T1G

Manufacturer Part Number
MUN5213DW1T1G
Description
TRANS BRT NPN DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of MUN5213DW1T1G

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Collector Emitter Voltage V(br)ceo
50V
Base Input Resistor R1
47kohm
Base-emitter Resistor R2
47kohm
Resistor Ratio, R1 / R2
1
Rf Transistor Case
SC-88
No. Of Pins
6
Rohs Compliant
Yes
Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
80
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
MUN5213DW1T1GOSTR

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Final Product/Process Change Notification #16266
MMBZ5263BLT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMBZ33VALT1G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-123
MMSD103T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
1000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/2
Results
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
0/80
0/2
0/30
0/240
0/6
0/90
0/240
0/6
0/89
Page 3 of 36

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