NSBC143ZDXV6T1G ON Semiconductor, NSBC143ZDXV6T1G Datasheet

NSBC143ZDXV6T1G

Manufacturer Part Number

NSBC143ZDXV6T1G

Description

TRANS BRT NPN DUAL 50V SOT563

Manufacturer

ON Semiconductor

Datasheet

1.NSBC143ZDXV6T1G.pdf (9 pages)

Specifications of NSBC143ZDXV6T1G

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

4.7K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Other names

NSBC143ZDXV6T1GOS
NSBC143ZDXV6T1GOS
NSBC143ZDXV6T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSBC143ZDXV6T1G

Manufacturer:

ON Semiconductor

Quantity:

3 000

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NSBC114EDXV6T1,

NSBC114EDXV6T5

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low power surface mount applications where board space is at

a premium.

Features

•

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

May, 2006 − Rev. 6

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation; T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Total Device Dissipation; T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Junction and Storage Temperature

Range

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Lead−Free Solder Plating

These are Pb−Free Devices

= 25°C unless otherwise noted, common for Q

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

= 25°C

Preferred Devices

Symbol

CBO

CEO

, T

qJA

stg

and Q

357 (Note 1)

350 (Note 1)

500 (Note 1)

250 (Note 1)

2.9 (Note 1)

4.0 (Note 1)

−55 to +150

Value

Max

100

)

mW/°C

mAdc

°C/W

Unit

Vdc

°C

NSBC1xxxDXV6T1

NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel

NSBC1xxxDXV6T5

NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel

†For information on tape and reel specifications,

*This package is inherently Pb−Free.

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

xx = Device Code (Refer to Page 2)

M = Date Code

DEVICE MARKING INFORMATION

Device

= Pb−Free Package

ORDERING INFORMATION

(4)

(3)

http://onsemi.com

NSBC114EDXV6T1

CASE 463A

SOT−563

PLASTIC

SOT−563* 4000/Tape & Reel

SOT−563* 8000/Tape & Reel

Package

(5)

Publication Order Number:

(2)

NSBC114EDXV6/D

MARKING

DIAGRAM

Shipping

(1)

(6)

xx M G

†

Related parts for NSBC143ZDXV6T1G

NSBC143ZDXV6T1G Summary of contents

Page 1

NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor ...

Page 2

NSBC114EDXV6T1, NSBC114EDXV6T5 DEVICE MARKING, ORDERING, AND RESISTOR VALUES Device† NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 (Note 2) NSBC143TDXV6T1 (Notes 2) NSBC113EDXV6T1 (Note 2) NSBC123EDXV6T1 (Notes 2) NSBC143EDXV6T1 (Notes 2) NSBC143ZDXV6T1 (Notes 2) NSBC124XDXV6T1 (Notes 2) NSBC123JDXV6T1 (Note 2) NSBC115EDXV6T1 (Notes 2) ...

Page 3

NSBC114EDXV6T1, NSBC114EDXV6T5 ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain ( 5.0 mA Collector-Emitter Saturation Voltage ( mA 0.3 mA mA, I ...

Page 4

NSBC114EDXV6T1, NSBC114EDXV6T5 300 250 200 150 100 R = 833°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 4 100 150 ...

Page 5

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 8

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 9

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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