NSBA123JDXV6T1G ON Semiconductor, NSBA123JDXV6T1G Datasheet - Page 3
![TRANS BRT PNP DUAL 50V SOT563](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NSBA123JDXV6T1G
Manufacturer Part Number
NSBA123JDXV6T1G
Description
TRANS BRT PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSBA123JDXV6T1G.pdf
(11 pages)
Specifications of NSBA123JDXV6T1G
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBA123JDXV6T1GOS
NSBA123JDXV6T1GOS
NSBA123JDXV6T1GOSTR
NSBA123JDXV6T1GOS
NSBA123JDXV6T1GOSTR
Product Discontinuance #16001
POSSIBLE REPLACEMENT PARTS:
Device to be Discontinued Recommended Replacement Supplier
Issue Date: 08-May-2007
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BC858CDW1T1
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BF421ZL1G
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BZX84B4V7LT3
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BZX84C11ET1
BZX84C13ET3
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BZX84C6V2LT3
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BZX84C13LT1G
BZX84C18LT1G
BZX84C3V3LT1G
BZX84C6V2LT1G
BZX84C8V2LT1G
none
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CS8101YDR8G
Replacement Device
Rev.08-24-05
Replacement Device Supplier
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