MT46V32M16P-6T IT:F Micron Technology Inc, MT46V32M16P-6T IT:F Datasheet - Page 61

• Manufacturer Part Number: MT46V32M16P-6T IT:F
• Description: DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16P-6T IT:F

• Density: 512 Mb
• Maximum Clock Rate: 333 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Package / Case: 66-TSOP
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Data from any READ burst may be truncated with a BURST TERMINATE command, as
shown in Figure 31 on page 66. The BURST TERMINATE latency is equal to the CL, that
is, the BURST TERMINATE command should be issued x cycles after the READ
command where x equals the number of desired data element pairs (pairs are required
by the 2n-prefetch architecture).
Data from any READ burst must be completed or truncated before a subsequent WRITE
command can be issued. If truncation is necessary, the BURST TERMINATE command
must be used, as shown in Figure 32 on page 67. The
t
defined in the section on WRITEs.) A READ burst may be followed by, or truncated with,
a PRECHARGE command to the same bank provided that auto precharge was not acti-
vated.
The PRECHARGE command should be issued x cycles after the READ command, where
x equals the number of desired data element pairs (pairs are required by the 2n-prefetch
architecture). This is shown in Figure 33 on page 68. Following the PRECHARGE
command, a subsequent command to the same bank cannot be issued until both
and
last data elements.
DQSS (MAX) case has a longer bus idle time. (
t
RP have been met. Part of the row precharge time is hidden during the access of the
61
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
512Mb: x4, x8, x16 DDR SDRAM
DQSS [MIN] and
t
DQSS (NOM) case is shown; the
©2000 Micron Technology, Inc. All rights reserved.
t
DQSS [MAX] are
Operations
t
RAS