MT46V32M16TG-6T IT:F Micron Technology Inc, MT46V32M16TG-6T IT:F Datasheet - Page 74

• Manufacturer Part Number: MT46V32M16TG-6T IT:F
• Description: DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16TG-6T IT:F

• Density: 512 Mb
• Maximum Clock Rate: 333 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Package / Case: 66-TSOP
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 195mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 38:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
NOP
74
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
512Mb: x4, x8, x16 DDR SDRAM
T2n
NOP
T3
Don’t Care
©2000 Micron Technology, Inc. All rights reserved.
Operations