MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 130

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

MRS Command to ODT Update Delay
Figure 82: Timing for MRS Command to ODT Update Delay
Figure 83: ODT Timing for Active or Fast-Exit Power-Down Mode
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Notes:
During normal operation, the value of the effective termination resistance can be
changed with an EMRS set command.
R
Command
Command
TT
Address
Internal
1. The LM command is directed to the mode register, which updates the information in
2. To prevent any impedance glitch on the channel, the following conditions must be met:
setting
ODT 2
ODT
CK#
CKE
CK#
R
CK
CK
TT
EMR (A6, A2), that is, R
t
entire duration of the
AOFD must be met before issuing the LM command; ODT must remain LOW for the
Valid
Valid
T0
T0
Old setting
t AOFD
t CK
EMRS 1
Ta0
Valid
Valid
T1
t CH
0ns
t
TT
MOD window until
130
(nominal).
t CL
t AON (MIN)
t AOND
Ta1
NOP
Valid
Valid
t AON (MAX)
T2
t MOD
t
MOD (MAX) updates the R
Undefined
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
Ta2
Valid
Valid
T3
t AOFD
R
TT
t
MOD is met.
2Gb: x4, x8, x16 DDR2 SDRAM
Unknown
NOP
Ta3
Valid
Valid
T4
t IS
t AOF (MIN)
R
2
Ta4
NOP
Valid
Valid
TT
T5
© 2006 Micron Technology, Inc. All rights reserved.
t AOF (MAX)
On
New setting
Indicates a break in
time scale
TT
setting.
NOP
Ta5
Valid
Valid
Don’t Care
T6
ODT Timing