MT48LC16M16A2BG-75:D Micron Technology Inc, MT48LC16M16A2BG-75:D Datasheet - Page 85

• Manufacturer Part Number: MT48LC16M16A2BG-75:D
• Description: DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2BG-75:D

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54VFBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-VFBGA
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Power-Down
Figure 53: Power-Down Mode
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Command
BA0, BA1
Address
Precharge all
active banks
DQM
CKE
CLK
A10
DQ
High-Z
t CMS
t CKS
PRECHARGE
t AS
Single bank
All banks
Bank(s)
T0
t CMH
t CKH
t AH
Note:
Two clock cycles
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is
a row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting
All banks idle, enter
power-down mode
t CK
1. Violating refresh requirements during power-down may result in a loss of data.
T1
NOP
t CL
t CKS
T2
NOP
t CH
Input buffers gated off
while in power-down mode
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Exit power-down mode
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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t
CKS).
256Mb: x4, x8, x16 SDRAM
t CKS
Tn + 1
NOP
All banks idle
© 1999 Micron Technology, Inc. All rights reserved.
Tn + 2
Power-Down
ACTIVE
Row
Bank
Row
Don’t Care