MT48LC16M16A2P-7E IT:D Micron Technology Inc, MT48LC16M16A2P-7E IT:D Datasheet - Page 80

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray

MT48LC16M16A2P-7E IT:D

Manufacturer Part Number
MT48LC16M16A2P-7E IT:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC16M16A2P-7E IT:D

Density
256 Mb
Maximum Clock Rate
143 MHz
Package
54TSOP-II
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
5.4 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Organization
16Mx16
Address Bus
15b
Access Time (max)
5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 50: Single WRITE Without Auto Precharge
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1 and the WRITE burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
t WR
T3
NOP
80
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Single bank
PRECHARGE
All banks
Bank
T5
256Mb: x4, x8, x16 SDRAM
T6
NOP
t RP
PRECHARGE Operation
© 1999 Micron Technology, Inc. All rights reserved.
Bank
Row
ACTIVE
T7
T8
NOP
Don’t Care

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