HL6319G-A Opnext, HL6319G-A Datasheet

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HL6319G-A

Manufacturer Part Number
HL6319G-A
Description
Laser Diode MQW-LD 640nm 10mW
Manufacturer
Opnext
Type
MQW-LDr
Datasheet
1.HL6319G-A.pdf (4 pages)

Specifications of HL6319G-A

Maximum Optical Output Power
10 mW
Maximum Optical Output Power Range
5 to 50 mW
Maximum Operating Current
95 mA
Laser Reverse Voltage
2 V
Photodiode Reverse Voltage
30 V
Wavelength
640 nm
HL6501MG
Visible High Power Laser Diode
Description
The HL6501MG is a 0.65 μm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for large capacity optical disc memories and various other types of optical equipment.
Hermetic sealing of the small package (φ5.6 mm) assures high reliability.
Features
• High output power: 35 mW (CW)
• Visible light output: λp = 658 nm Typ
• Small package: φ 5.6 mm
• Low astigmatism: 6 μm Typ (P
• Single longitudinal mode
Absolute Maximum Ratings
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Note: Pulse condition : Pulse width = 100 ns , duty = 50%
Optical and Electrical Characteristics
Threshold current
Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Rev.0 Aug. 01, 2008 page 1 of 4
Item
Item
Ith
V
ηs
θ//
θ⊥
A
λp
I
S
Symbol
OP
S
O
= 5 mW)
P
P
V
V
Topr
Tstg
O
O(pulse)
R(LD)
R(PD)
0.05
Min
645
2.1
0.5
30
18
—
7
Symbol
0.75
Typ
658
2.6
8.5
0.2
45
22
6
Package Type
HL6501MG: MG
Max
10.5
665
3.0
1.0
1.5
70
26
—
–10 to +60
–40 to +85
Ratings
50 *
35
30
2
mW/mA
Unit
mA
μm
nm
mA
V
°
°
—
P
18 (mW) / (I
P
P
P
P
P
PD
O
O
O
O
O
O
Internal Circuit
= 30 mW
= 30 mW
= 30 mW
= 5 mW, NA = 0.55
= 30 mW
= 30 mW, V
Test Conditions
1
ODE2031-00 (M)
2
Aug. 01, 2008
(24mW)
3
(T
Unit
(T
mW
mW
°C
°C
R(PD)
V
V
LD
C
C
– I
= 25°C)
= 25°C)
Rev.0
= 5 V
(6mW)
)

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HL6319G-A Summary of contents

Page 1

HL6501MG Visible High Power Laser Diode Description The HL6501MG is a 0.65 μm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure suitable as a light source for large capacity optical disc memories and various other ...

Page 2

HL6501MG Typical Characteristic Curves Optical Output Power vs. Forward Current 25° 0° Foward current, I Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0.2 ...

Page 3

HL6501MG Package Dimensions Rev.0 Aug. 01, 2008 page 5.6 –0.025 1.0 ± 0.1 (0.4) 1.6 ± 0.2 4.1 ± 0.3 3.55 ± 0.1 Emitting Point 3 – 0.45 ± 0 ...

Page 4

... HL6501MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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