MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 18

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

1.0
0.8
0.6
0.4
0.2
1.2
0.01
0
0.1
0
1
0
V
10
1
R
Figure 64. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
Figure 62. V
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G
20
2
3
30
100
CE(sat)
10
1
0
Figure 66. Input Voltage versus Output Current
4
−25°C
25°C
versus I
40
75°C
2
5
4
f = 1 MHz
I
T
I
25°C
E
C
A
, COLLECTOR CURRENT (mA)
C
= 0 V
50
I
= 25°C
C
/I
6
http://onsemi.com
B
6
= 10
75°C
T
A
8
= −25°C
60
7
18
10
1000
100
12
100
0.1
10
10
1
1
0
1
Figure 65. Output Current versus Input Voltage
V
14
O
= 0.2 V
1
16
2
Figure 63. DC Current Gain
I
C
V
18
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
3
A
75°C
= −25°C
20
25°C
4
5
10
25°C
6
T
V
V
A
7
O
O
V
75°C
= −25°C
= 5 V
CE
= 5 V
= 10 V
8
9
100
10