MUN5330DW1T1G ON Semiconductor, MUN5330DW1T1G Datasheet - Page 2

• Manufacturer Part Number: MUN5330DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5330DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 1kohm
• Base-emitter Resistor R2: 1kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SC-88
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Specifications Brochure, BRD8011/D.
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
Device
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Package
Marking
http://onsemi.com
11
12
13
14
15
16
30
31
32
33
34
35
2
R1 (K)
4.7
1.0
2.2
4.7
4.7
2.2
10
22
47
10
10
22
R2 (K)
1.0
2.2
4.7
10
22
47
47
47
47
47
∞
∞
3000 / Tape & Reel
Shipping
†