NSB1706DMW5T1G ON Semiconductor, NSB1706DMW5T1G Datasheet

NSB1706DMW5T1G

Manufacturer Part Number

NSB1706DMW5T1G

Description

TRANS BRT NPN DUAL 50V SOT353

Manufacturer

ON Semiconductor

Datasheet

1.NSB1706DMW5T1G.pdf (3 pages)

Specifications of NSB1706DMW5T1G

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

4.7K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Other names

NSB1706DMW5T1GOS

Available stocks

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Manufacturer

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Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSB1706DMW5T1G

Manufacturer:

Quantity:

39 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSB1706DMW5T1G

Manufacturer:

Quantity:

30 000

Company:

H&T Electronics

Part Number:

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Quantity:

4 500

Company:

H&T Electronics

Part Number:

NSB1706DMW5T1G

Quantity:

4 500

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NSB1706DMW5T1G

Dual Bias Resistor

Transistor

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSB1706DMW5T1G,

two BRT devices are housed in the SC−88A package which is ideal for

low power surface mount applications where board space is at a

premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 inch Pad.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

October, 2009 − Rev. 4

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature

The Bias Resistor Transistor (BRT) contains a single transistor with

Compliant

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= 25°C unless otherwise noted, common for Q

= 25°C

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

Symbol

CBO

CEO

, T

qJA

qJL

stg

and Q

187 (Note 1)

256 (Note 2)

670 (Note 1)

490 (Note 2)

250 (Note 1)

385 (Note 2)

493 (Note 1)

325 (Note 2)

188 (Note 1)

208 (Note 2)

−55 to +150

1.5 (Note 1)

2.0 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

Value

Max

)

100

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

NSB1706DMW5T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

(1)

MARKING DIAGRAM

U6 = Device Marking

M = Date Code

http://onsemi.com

= Pb−Free Package

(5)

CASE 419A

STYLE 1

SC−88A

U6 M G

(Pb−Free)

Package

SC−88A

(2)

Publication Order Number:

(4)

NSB1706DMW5T1/D

Tape & Reel

Shipping

(3)

3000 /

†

Related parts for NSB1706DMW5T1G

NSB1706DMW5T1G Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the NSB1706DMW5T1G, two BRT devices are housed in the SC−88A package which is ideal for low power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( ...

Page 3

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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