NSBC115TPDP6T5G ON Semiconductor, NSBC115TPDP6T5G Datasheet - Page 5

• Manufacturer Part Number: NSBC115TPDP6T5G
• Description: TRANS BRT DUAL COMPL SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBC115TPDP6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 339mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 100kohm
• Rf Transistor Case: SOT-963
• No. Of Pins: 6
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

0.10
0.01
2.40
2.20
2.00
1.80
1.60
1.40
1.20
1.00
0.80
1.0
0
0
I
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 NPN TRANSISTOR
C
5
5
/I
B
T
V
= 10
A
CB
10
10
= 25°C
Figure 3. Output Capacitance
I
C
, COLLECTOR BASE VOLTAGE (V)
, COLLECTOR CURRENT (mA)
Figure 1. V
15
15
20
20
0.10
1.0
10
25
25
CE(sat)
0
T
T
A
A
30
30
Figure 5. Input Voltage vs. Output Current
= 150°C
= −55°C
vs. I
5
25°C
150°C
35
35
C
10
I
C
, COLLECTOR CURRENT (mA)
−55°C
40
40
http://onsemi.com
15
45
45
20
50
50
5
25
1000
0.01
100
100
1.0
0.1
10
10
30
1
0.1
0.5
25°C
V
150°C
35
CE
Figure 4. Output Current vs. Input Voltage
1
= 10 V
40
I
1.5
C
, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
45
−55°C
V
in
1
2
, INPUT VOLTAGE (V)
50
150°C
2.5
25°C
3
10
3.5
−55°C
4
4.5
100
5