BCR 22PN H6727 Infineon Technologies, BCR 22PN H6727 Datasheet - Page 5

• Manufacturer Part Number: BCR 22PN H6727
• Description: TRANS NPN/PNP DGTL 50V SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 22PN H6727

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Permissible Pulse Load R
Total power dissipation P
mW
K/W
10
10
10
10
10
300
250
225
200
175
150
125
100
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
thJS
tot
10
= f (T
-2
= f (t
S
s
p
T
)
t
)
p
S
150
10
0
5
Permissible Pulse Load
P
totmax
10
10
10
10
-
3
2
1
0
10
/ P
-6
totDC
10
-5
= f (t
10
-4
p
)
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
BCR22PN
2007-07-31
-2
s
t
p
10
0