MUN5211DW1T1 ON Semiconductor, MUN5211DW1T1 Datasheet - Page 27

• Manufacturer Part Number: MUN5211DW1T1
• Description: TRANS BRT NPN DUAL 50V SOT363
• Manufacturer: ON Semiconductor

Specifications of MUN5211DW1T1

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: MUN5211DW1T1OSCT

Final Product/Process Change Notification #16266
SMSZ1605-49T3G
SMSZ3620T1G
SMSZ3707T1G
SMSZ4688ST1G
SMUN5111DW1T1G
SMUN5211DW1T1G
SMUN5235DW1T1G
SMUN5311DW1T1G
SMUN5314DW1T1G
SMUN5335DW1T2G
SSV1BC847BDW1T1
SSV1BC847BDW1T1G
SSV1BC847BPDW1T1
SSV1D116ML2T3
SSV1D116ML2T3G
SSV1MUN5312DW1T1
SSV1MUN5313DW1T1
SSVBC856BDW1T1
SSVMUN5312DW1T1G
SSVPZTA92T1G
SV1BC847BPDW1T3G
SZBZX84B16LT1G
SZBZX84B5V1LT1G
SZBZX84B5V6LT1G
SZBZX84B6V2LT1G
SZBZX84B6V8LT1G
SZBZX84B7V5LT1G
SZBZX84C10ET1
SZBZX84C10ET1G
SZBZX84C10ET3
SZBZX84C10LT1
SZBZX84C10LT1G
SZBZX84C10LT3
SZBZX84C11ET1
SZBZX84C11ET1G
SZBZX84C11LT1
SZBZX84C11LT1G
SZBZX84C12ET1
SZBZX84C12ET1G
SZBZX84C12ET3
SZBZX84C12ET3G
SZBZX84C12LT1
SZBZX84C12LT1G
SZBZX84C12LT3
SZBZX84C12LT3G
SZBZX84C13ET1
SZBZX84C13ET1G
SZBZX84C13LT1
SZBZX84C13LT1G
SZBZX84C13LT3
SZBZX84C13LT3G
SZBZX84C15ET1G
SZBZX84C15ET3G
SZBZX84C15LT1
SZBZX84C15LT1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 27 of 36