MUN5137DW1T1 ON Semiconductor, MUN5137DW1T1 Datasheet

TRANS BRT PNP DUAL 50V SOT363

MUN5137DW1T1

Manufacturer Part Number
MUN5137DW1T1
Description
TRANS BRT PNP DUAL 50V SOT363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5111DW1T1G.pdf (20 pages)

Specifications of MUN5137DW1T1

Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Other names
MUN5137DW1T1OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MUN5137DW1T1
Manufacturer:
ON
Quantity:
6 180
MUN5111DW1T1G Series
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1G series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
(T
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature Range
A
The Bias Resistor Transistor (BRT) contains a single transistor with a
A
A
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C unless otherwise noted, common for Q
= 25°C
= 25°C
(Both Junctions Heated)
(One Junction Heated)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Lead
Characteristic
Characteristic
Rating
Preferred Devices
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
qJL
C
D
D
stg
1
and Q
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
2
Value
−100
)
Max
Max
−50
−50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
°C
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
See specific marking information in the device marking table
on page 2 of this data sheet.
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
xx
M
G
ORDERING INFORMATION
(3)
(4)
Q
= Device Code (Refer to page 2)
= Date Code
= Pb−Free Package
1
MARKING DIAGRAM
http://onsemi.com
SC−88 / SOT−363
R
6
1
2
CASE 419B
STYLE 1
(5)
R
xx M G
1
Publication Order Number:
R
(2)
G
1
1
MUN5111DW1T1/D
R
2
Q
(1)
(6)
2

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MUN5137DW1T1 Summary of contents

Page 1

MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor ...

Page 2

... MUN5134DW1T1G SOT−363 (Pb−Free) MUN5135DW1T1G SOT−363 (Pb−Free) MUN5136DW1T1G SOT−363 (Pb−Free) MUN5137DW1T1G SOT−363 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Marking R1 (K) R2 (K) 0A ...

Page 3

... MUN5130DW1T1G MUN5131DW1T1G MUN5137DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5111DW1T1G h MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G http://onsemi.com 3 and Min Typ Max − − −100 CBO − − −500 CEO − − −0.5 EBO − ...

Page 4

... MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G MUN5111DW1T1G R MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G http://onsemi.com 4 and Q ) (Continued Min Typ Max OL − − −0.2 − − −0.2 − − −0.2 − − −0.2 − ...

Page 5

ALL MUN5111DW1T1G SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES http://onsemi.com 5 100 150 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1G -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1G -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) TBD V , REVERSE BIAS VOLTAGE (VOLTS) ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1G 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1G 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) 3.5 3 2.5 2 1.5 1 ...

Page 17

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat ...

Page 18

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 1.2 1.0 0.8 0.6 0.4 0 ...

Page 19

... TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1G −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 67. V versus I CE(sat) 1.4 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 69. Output Capacitance 100 10 25° Figure 71. Input Voltage versus Output Current 1000 75°C 100 ...

Page 20

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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