NSBC143ZPDXV6T5 ON Semiconductor, NSBC143ZPDXV6T5 Datasheet - Page 6

• Manufacturer Part Number: NSBC143ZPDXV6T5
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC143ZPDXV6T5

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBC143ZPDXV6T5OS

0.01
0.1
4
3
2
1
0
1
0
0
I
C
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
/I
B
= 10
10
Figure 9. Output Capacitance
V
R
Figure 7. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
100
0.1
NSBC114EPDXV6T1, NSBC114EPDXV6T5
10
1
0
30
T
Figure 11. Input Voltage versus Output Current
versus I
A
75 C
= −25 C
V
O
= 0.2 V
40
f = 1 MHz
l
T
C
10
E
40
A
= 0 V
= 25 C
I
C
, COLLECTOR CURRENT (mA)
25 C
http://onsemi.com
20
50
50
6
0.001
1000
0.01
T
100
100
30
0.1
A
10
10
1
= −25 C
75 C
1
0
Figure 10. Output Current versus Input
1
75 C
25 C
40
2
Figure 8. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
T
3
, INPUT VOLTAGE (VOLTS)
A
50
25 C
= −25 C
4
Voltage
10
5
6
V
O
7
= 5 V
8
V
T
CE
A
= 75 C
= 10 V
9
−25 C
25 C
100
10