NSBC114TDXV6T5 ON Semiconductor, NSBC114TDXV6T5 Datasheet - Page 5

• Manufacturer Part Number: NSBC114TDXV6T5
• Description: TRANS BRT NPN DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC114TDXV6T5

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: NSBC114TDXV6T5OS

0.001
0.01
0.1
4
2
1
0
3
1
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
Figure 2. V
V
20
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1
20
CE(sat)
0.1
10
1
NSBC114EDXV6T1, NSBC114EDXV6T5
0
versus I
Figure 6. Input Voltage versus Output Current
V
30
O
= 0.2 V
T
A
40
= −25°C
C
10
f = 1 MHz
I
T
E
40
75°C
A
I
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
T
50
A
= −25°C
5
0.001
75°C
1000
30
0.01
100
100
0.1
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 3. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= −25°C
50
, INPUT VOLTAGE (VOLTS)
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
−25°C
= 5 V
9
25°C
100
10