NSBC113EPDXV6T1 ON Semiconductor, NSBC113EPDXV6T1 Datasheet - Page 13

• Manufacturer Part Number: NSBC113EPDXV6T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC113EPDXV6T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBC113EPDXV6T1OS

1000
1000
100
100
1.0
1.0
Figure 44. DC Current Gain − PNP
Figure 42. DC Current Gain − PNP
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
10
10
V
CE
= 5.0 V
V
CE
T
T
V
V
= 5.0 V
A
A
CE
CE
= 25°C
= 25°C
= 10 V
= 10 V
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100
100
13
1000
1000
100
100
1.0
1.0
Figure 43. DC Current Gain − NPN
Figure 45. DC Current Gain − NPN
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
10
10
V
V
CE
CE
T
T
V
= 5.0 V
= 5.0 V
A
A
CE
V
= 25°C
= 25°C
CE
= 10 V
= 10 V
100
100