MUN5312DW1T1 ON Semiconductor, MUN5312DW1T1 Datasheet - Page 27

• Manufacturer Part Number: MUN5312DW1T1
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5312DW1T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -

MUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR
1
1000
V
= 10 V
I
/I
= 10
CE
C
B
75°C
100
T
= −25°C
0.1
75°C
A
25°C
−25°C
25°C
0.01
10
0.001
1
0
5
10
15
20
25
30
1
10
100
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 106. V
versus I
Figure 107. DC Current Gain
CE(sat)
C
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