MUN5334DW1T1G ON Semiconductor, MUN5334DW1T1G Datasheet - Page 22

• Manufacturer Part Number: MUN5334DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5334DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhms
• Typical Resistor Ratio: 0.47
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Details

Final Product/Process Change Notification #16266
MMSZ5V1T1G
MMSZ5V1T3G
MMSZ5V6T1
MMSZ5V6T1G
MMSZ5V6T3G
MMSZ6V2T1G
MMSZ6V8T1G
MMSZ6V8T3G
MMSZ7V5T1G
MMSZ8V2ET1G
MMSZ8V2T1
MMSZ8V2T1G
MMSZ8V2T1H
MMSZ8V2T3G
MMSZ9V1T1G
MSQA6V1W5T2G
MUN5111DW1T1
MUN5111DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5133DW1T1
MUN5133DW1T1G
MUN5135DW1T1G
MUN5211DW1T1
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1
MUN5213DW1T1G
MUN5214DW1T1
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5235DW1T1G
MUN5237DW1T1G
MUN5311DW1T1
MUN5311DW1T1G
MUN5311DW1T2G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1
MUN5330DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1
MUN5335DW1T1G
MUN5335DW1T2
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 22 of 36