MMBT4403-7-F Diodes Inc, MMBT4403-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT4403-7-F
• Description: TRANS PNP 40V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT4403-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4403-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30058 Rev. 9 - 2
250
350
300
200
150
100
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
25
Fig. 1 Maximum Power Dissipation vs.
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
Note 1
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
I
h
h
h
f
t
BL
obo
t
t
FE
t
2 of 4
ibo
oe
re
fe
T
d
s
ie
r
f
-0.75
1,000
Min
-5.0
100
100
200
-40
-40
1.5
0.1
1.0
30
60
20
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
1
Fig. 2 Typical DC Current Gain vs. Collector Current
V
-0.40
-0.75
-0.95
-1.30
Max
-100
-100
300
500
100
225
CE
8.5
8.0
30
15
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 5V
I , COLLECTOR CURRENT (mA)
C
x 10
MHz
Unit
T = 25°C
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
A
V
V
V
V
V
10
-4
T = 150°C
A
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -100μA, I
= -150mA, I
= -100μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -150mA, I
= -500mA, I
= I
= -35V, V
= -35V, V
= -10V, I
= -10V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -10V, I
= -30V, I
= -30V, I
B2
T = -50°C
= -2.0V, I
A
= -15mA
100
Test Condition
C
C
C
C
E
B
C
EB(OFF)
EB(OFF)
B
B
B
B
CE
= -1.0mA,
= -20mA,
= -150mA,
= -150mA,
CE
CE
CE
CE
= 0
= 0
= 0
= -15mA
= -50mA
= -15mA
= -50mA
B1
= -1.0V
= -1.0V
= -2.0V
= -1.0V
= -2.0V
= -15mA
= -0.4V
= -0.4V
© Diodes Incorporated
E
1,000
C
MMBT4403
= 0
= 0