MMBT4401-7-F Diodes Inc, MMBT4401-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT4401-7-F
• Description: TRANS NPN 350MW 40V SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT4401-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4401-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT4401
Document number: DS30039 Rev. 13 - 2
250
300
200
150
400
350
100
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
R
θJA
25
= 417 C/W
T , AMBIENT TEMPERATURE (°C)
Characteristic
A
°
50
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
V
V
V
V
Symbol
V
200
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
h
C
C
h
CEX
I
h
h
h
f
BL
t
t
t
t
FE
oe
eb
re
T
d
s
cb
ie
fe
r
f
www.diodes.com
2 of 4
0.75
Min
100
250
6.0
1.0
0.1
1.0
60
40
20
40
80
40
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.001
0.01
0.1
1
0.1
Max
0.40
0.75
0.95
100
100
300
500
225
1.2
6.5
8.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
30
15
30
⎯
15
20
30
T = 25°C
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
A
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
x 10
Unit
MHz
nA
nA
pF
pF
kΩ
μS
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
-4
1
DC
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
Pw = 100ms
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= 100μA, I
= 150mA, I
= 100μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= I
= 35V, V
= 35V, V
= 10V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= 30V, I
= 30V, I
B2
= 2.0V, I
= 15mA
Test Condition
10
C
C
C
C
E
B
C
EB(OFF)
EB(OFF)
B
B
B
B
CE
= 1.0mA,
= 20mA,
= 150mA,
= 150mA,
CE
CE
CE
CE
= 0
= 0
= 0
= 15mA
Pw = 10ms
= 50mA
= 15mA
= 50mA
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 2.0V
MMBT4401
= 15mA
= 0.4V
= 0.4V
© Diodes Incorporated
December 2008
C
E
= 0
= 0
100