MMBT2222A Fairchild Semiconductor, MMBT2222A Datasheet - Page 3

• Manufacturer Part Number: MMBT2222A
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2222A

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2222AFSTR

PN2222A / MMBT2222A / PZT2222A Rev. A3
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
500
400
300
200
100
500
100
0.1
0.8
0.6
0.4
10
0
1
0.1
1
Figure 3. Base-Emitter Saturation Voltage
25
1
Figure 1. Typical Pulsed Current Gain
Voltage vs Collector Current
125 °C
Typical Pulsed Current Gain
25 °C
Figure 5. Collector Cutoff Current
V
β = 10
0.3
Base-Emitter Saturation
CB
- 40 °C
vs Ambient Temperature
Collector-Cutoff Current
I
= 40V
vs Collector Current
- 40 캜
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMPERATURE ( C)
vs Ambient Temperature
I
C
C
50
C
A
- COLLECTOR CURRENT (m A)
vs Collector Current
vs Collector Current
°C
1
25 캜
10
3
°C
75
125 캜
10
°C
100
30
100
V
100
125
CE
°
= 5V
300
150
500
3
Figure 6. Emitter Transition and Output Capacitance
0.4
0.3
0.2
0.1
Figure 2. Collector-Emitter Saturation Voltage
0.8
0.6
0.4
0.2
20
16
12
Capacitance vs Reverse Bias Voltage
8
4
1
1
0.1
0.1
Voltage vs Collector Current
Collector-Emitter Saturation
Emitter Transition and Output
V
Figure 4. Base-Emitter On Voltage
Base-Emitter ON Voltage vs
CE
β = 10
= 5V
I
- 40 °C
vs Reverse Bias Voltage
C
I
I
C
C
- COLLECTOR CURRENT (mA)
vs Collector Current
vs Collector Current
REVERSE BIAS VOLTAGE (V)
Collector Current
- COLLECTOR CURRENT (mA)
C ob
1
10
1
25 °C
25 캜
°C
C te
10
125 캜
125 °C
100
°C
f = 1 MHz
- 40 캜
10
www.fairchildsemi.com
°C
500
100
25