MMBT4124-7-F Diodes Inc, MMBT4124-7-F Datasheet
MMBT4124-7-F
Manufacturer Part Number
MMBT4124-7-F
Description
TRANS NPN 25V 300MW SMD SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBT4124-7-F.pdf
(3 pages)
Specifications of MMBT4124-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
300mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
300 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Minimum Operating Temperature
- 55 C
Dc
0641
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT4124-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT4124-7-F
Manufacturer:
Diodes Inc
Quantity:
36 229
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
•
•
•
•
•
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Notes:
MMBT4124
Document number: DS30105 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4126)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
Top View
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CBO
EBO
1 of 3
h
f
obo
FE
ibo
fe
T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
•
•
•
•
•
•
•
•
T
Symbol
Symbol
Device Schematic
B
J
V
V
V
R
, T
P
CBO
CEO
EBO
I
θ JA
C
Please click here to visit our online spice models database.
D
Min
120
120
300
5.0
STG
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
30
25
60
⎯
⎯
⎯
⎯
⎯
⎯
C
E
2
Max
0.30
0.95
O
360
480
4.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
3
Fire Retardants.
Unit
MHz
-55 to +150
nA
nA
pF
pF
⎯
⎯
V
V
V
V
V
Value
Value
200
300
417
5.0
30
25
I
I
I
V
V
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
C
C
E
C
C
C
C
CB
EB
CB
EB
CE
CE
= 10μA, I
= 10μA, I
= 1.0mA, I
= 2.0mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= 20V, I
= 3.0V, I
= 1.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
Test Condition
C
E
E
B
B
C
C
B
C
= 0
= 0
CE
CE
= 0V
= 5.0mA
= 5.0mA
= 10mA,
= 0
= 0V
= 2.0mA,
= 1.0V
= 1.0V
MMBT4124
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
V
January 2009
C
E
= 0
= 0
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MMBT4124-7-F Summary of contents
Page 1
... V (BR)EBO ⎯ I CBO ⎯ I EBO 120 ⎯ V CE(SAT) ⎯ V BE(SAT) ⎯ C obo ⎯ C ibo 120 h fe 300 www.diodes.com MMBT4124 E Value Unit 5.0 V 200 mA Value Unit 300 mW °C/W 417 °C -55 to +150 Max Unit Test Condition ⎯ 10μ ⎯ 1.0mA, I ...
Page 2
... Fig. 2 Typical DC Current Gain vs. Collector Current 10 1 0.1 100 1,000 0 1MHz C ibo C obo 10 100 www.diodes.com MMBT4124 1 10 100 I , COLLECTOR CURRENT (mA 100 I , COLLECTOR CURRENT (mA) C Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current © Diodes Incorporated 1,000 1,000 January 2009 ...
Page 3
... Ordering Information (Note 5) Part Number MMBT4124-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 Code Month Jan Feb Mar Code Package Outline Dimensions Suggested Pad Layout ...