BC856B-7-F Diodes Inc, BC856B-7-F Datasheet - Page 2
![TRANS BIPO PNP 300MW 65V SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
BC856B-7-F
Manufacturer Part Number
BC856B-7-F
Description
TRANS BIPO PNP 300MW 65V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BC856A-7-F.pdf
(4 pages)
Specifications of BC856B-7-F
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-65V
Power Dissipation Pd
300mW
Dc Collector Current
-100mA
Dc Current Gain Hfe
330
Operating Temperature Range
-65°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BC856B-7-F
BC856B-7-FDITR
BC856B-7-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC856B-7-F
Manufacturer:
DIODES
Quantity:
69 000
Company:
Part Number:
BC856B-7-F
Manufacturer:
Diodes Inc
Quantity:
86 828
Company:
Part Number:
BC856B-7-F
Manufacturer:
DIODES
Quantity:
2 260
Part Number:
BC856B-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage (Note 5)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS11207 Rev. 19 - 2
5.
Short duration pulse test used to minimize self-heating effect.
Characteristic
Current Gain Group A
Current Gain Group A
Current Gain Group A
Current Gain Group A
Current Gain Group A
@T
A
= 25°C unless otherwise specified
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
C
C
C
C
C
B
B
B
B
B
Symbol
V
V
V
V
V
V
www.diodes.com
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
I
I
I
BE(ON)
h
h
h
h
NF
h
h
h
h
h
h
CBO
CBO
h
h
h
CES
CES
CES
f
CBO
oe
oe
oe
FE
re
re
re
T
fe
fe
fe
ie
ie
ie
2 of 4
-600
Min
125
220
420
100
-80
-50
-30
-65
-45
-30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
1.5x10
2x10
3x10
-250
-700
-850
-650
Typ
200
330
600
180
290
520
200
2.7
4.5
8.7
-75
18
30
60
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2
-4
-4
-4
-300
-650
-750
-820
Max
-4.0
250
475
800
-15
-15
-15
-15
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MHz
Unit
mV
mV
mV
kΩ
kΩ
kΩ
µS
µS
µS
nA
nA
nA
nA
µA
dB
pF
—
—
—
—
—
—
—
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
V
V
V
f = 100MHz
V
V
R
C
C
E
f = 1.0kHz
V
C
C
C
C
CE
CE
CE
CE
CE
CE
CB
CB
CE
CB
CE
S
CE
= 10μA, I
= 10mA, I
= 1μA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
= 2kΩ, f = 1kHz, Δf = 200Hz
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -80V
= -50V
= -30V
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
= -5.0V, I
= -5.0V, I
Test Condition
C
B
= 0
B
B
B
= 0
C
C
C
C
C
A
= 0
C
B
B
= -0.5mA
= -0.5mA
= -2.0mA,
= -2.0mA
= -10mA
= 150°C
= -10mA,
= 200µA,
= -2.0mA
= -5.0mA
= -5.0mA
BC856A-BC858C
© Diodes Incorporated