MMBT5551-7-F Diodes Inc, MMBT5551-7-F Datasheet - Page 3

• Manufacturer Part Number: MMBT5551-7-F
• Description: TRANS NPN 160V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT5551-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Collector Emitter Voltage V(br)ceo: 160V
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 80
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5551-FDITR

Ordering Information
Marking Information
Notes:
Date Code Key
MMBT5551
Document number: DS30061 Rev. 11 - 2
Month
Year
Code
Code
1,000
100
0.14
0.12
0.09
0.08
0.05
0.15
0.13
0.07
0.06
0.04
10
0.11
0.10
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1
1998
1
J
Jan
1
V
1
MMBT5551-7-F
CE
Fig. 3 Typical Collector-Emitter Saturation Voltage
Part Number
Fig. 5 Typical Gain-Bandwidth Product vs.
= 5V
1999
K
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Feb
2000
2
L
10
Collector Current
vs. Collector Current
2001
(Note 5)
M
Mar
10
3
2002
N
100
Apr
2003
4
P
K4N
2004
R
May
100
5
1,000
www.diodes.com
2005
S
SOT-23
Case
3 of 4
Jun
2006
6
T
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2007
U
Jul
1.0
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.8
7
0.1
2008
V
V
Fig. 4 Typical Base-Emitter Turn-On Voltage
CE
Aug
= 5V
2009
8
I , COLLECTOR CURRENT (mA)
W
C
vs. Collector Current
2010
1
X
Sep
9
2011
Y
T = -50°C
3000/Tape & Reel
A
Packaging
Oct
T = 25°C
O
2012
A
Z
10
T = 150°C
A
2013
MMBT5551
A
Nov
N
© Diodes Incorporated
2014
August 2008
B
100
Dec
D
2015
C