MMBT3906T-7-F Diodes Inc, MMBT3906T-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT3906T-7-F
• Description: TRANS PNP 40V 200MA SOT523
• Manufacturer: Diodes Inc

Specifications of MMBT3906T-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3906T-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Noise Figure
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30271 Rev. 8 - 2
250
200
150
100
50
5. Short duration pulse test used to minimize self-heating effect.
0
0
T , AMBIENT TEMPERATURE (°C)
40
A
Fig. 1 Power Derating Curve
Characteristic
80
120
@T
A
= 25°C unless otherwise specified
160
200
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V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
I
NF
h
h
2 of 4
h
f
BL
t
t
obo
t
t
FE
ibo
oe
T
d
ie
re
fe
s
r
f
-0.65
Min
-5.0
100
100
250
-40
-40
2.0
0.1
3.0
60
80
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
0.1
Fig. 2 Typical Input and Output Capacitance vs.
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
-50
-50
4.0
4.5
10
12
10
60
35
35
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-BASE VOLTAGE (V)
CB
x 10
MHz
Unit
nA
nA
dB
kΩ
μS
pF
pF
Collector-Base Voltage
⎯
⎯
ns
ns
ns
ns
V
V
V
V
V
1
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
R
B1
CE
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -10mA, I
S
= -10μA, I
= -1.0mA, I
= -10μA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -50mA, I
= -10mA, I
= -50mA, I
= I
= 1.0kΩ, f = 1.0kHz
= -30V, V
= -30V, V
= -0.5V, f = 1.0MHz, I
= 1.0V, I
= -5.0Vdc, I
= -5.0V, f = 1.0MHz, I
= -20V, I
= -3.0V, I
= -3.0V, I
B2
= 0.5V, I
= -1.0mA
Test Condition
10
C
E
B
B
B
B
C
C
B
EB(OFF)
EB(OFF)
C
C
= 0
= 0
CE
= -1.0mA
= 10mA,
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
= 0
= -10mA,
= -10mA,
B1
C
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= 100μAdc,
= -1.0mA
© Diodes Incorporated
= -3.0V
= -3.0V
MMBT3906T
E
C
100
= 0
= 0