MMBTA28-7-F Diodes Inc, MMBTA28-7-F Datasheet
MMBTA28-7-F
Manufacturer Part Number
MMBTA28-7-F
Description
TRANS BIPO NPN DARL 80V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBTA28-7-F.pdf
(3 pages)
Specifications of MMBTA28-7-F
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (max)
500nA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
300mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
80V
Gain Bandwidth Ft Typ
125MHz
Power Dissipation Pd
300mW
Dc Collector Current
500mA
Dc Current Gain Hfe
10000
Rohs Compliant
Yes
Transition Frequency Typ Ft
125MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBTA28-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA28-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30367 Rev. 9 - 2
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
E
V
V
V
V
Symbol
V
B
(BR)CBO
(BR)EBO
(BR)CEO
B
CE(SAT)
BE(SAT)
C
I
I
I
C
h
1 of 3
CBO
CES
EBO
f
TOP VIEW
obo
FE
ibo
T
T
Symbol
J
V
V
V
G
H
C
R
C
, T
P
CBO
CEO
EBO
I
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
θ JA
C
D
D
STG
A
E
10,000
10,000
Please click here to visit our online spice models database.
E
Min
125
80
12
80
⎯
⎯
⎯
⎯
⎯
8.0 Typical
J
15 Typical
B C
K
2
O
Max
L
100
500
100
1.5
2.0
3
⎯
⎯
⎯
⎯
⎯
Fire Retardants.
-55 to +150
MHz
Unit
nA
nA
nA
pF
pF
⎯
Value
V
V
V
V
V
M
500
300
417
80
80
12
I
I
I
V
V
V
I
I
I
I
V
V
V
f = 100MHz
C
E
C
C
C
C
C
CB
CE
EB
CB
EB
CE
= 100μA I
= 100μA I
= 100μA I
= 10mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10V, I
= 60V, I
= 10V
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 5.0V, I
MMBTA28
All Dimensions in mm
Dim
Test Condition
M
A
B
C
D
E
G
H
K
J
L
α
C
C
E
B
E
C
B
= 0
= 0
= 0
= 0
= 0
CE
CE
CE
= 10mA,
= 100μA
SOT-23
= 5.0V
= 5.0V
= 5.0V
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
© Diodes Incorporated
0°
°C/W
Unit
mW
mA
°C
E
V
V
V
C
MMBTA28
= 0
0.180
= 0
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°
Related parts for MMBTA28-7-F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANS BIPO NPN DARL 80V SOT23-3
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
TRANSISTOR NPN 40V 200MA SOT-23
Manufacturer:
Infineon Technologies
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) AF TRANS GP BJT PNP 40V 0.2A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT PNP 60V 0.6A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT NPN 40V 0.6A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT NPN 40V 0.2A
Manufacturer:
Infineon Technologies
Part Number:
Description:
MMBT Series 80 V 500 mA Surface Mount PNP Silicon Driver Transistor - SOT-23
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 240V 350mW
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) -
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) -
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG 50V 45V VCEO 6.0V VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG 30V 30V VCEO 5.0V VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG -80V -65V VCEO -5.0 VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG -50V -45V VCEO 6.0V VEBO
Manufacturer:
Diodes Inc
MMBTA28-7-F Summary of contents
Page 1
... V = 5.0V ⎯ ⎯ 100mA 5. 1 100mA 100μ 2 100mA 5. 10V 1.0MHz 0.5V 1.0MHz 5.0V 10mA, ⎯ MHz f = 100MHz O Fire Retardants © Diodes Incorporated Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Unit °C/W ° MMBTA28 ...
Page 2
... A 100 10 100 100 www.diodes.com 1000 -50° 25° 150°C A 100 COLLECTOR CURRENT (mA) C Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 150° 25° -50° 100 I , COLLECTOR CURRENT (mA) C Fig. 4 Typical DC Current Gain vs. Collector Current © Diodes Incorporated 1,000 1,000 MMBTA28 ...
Page 3
... Ordering Information (Note 5) Part Number MMBTA28-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...