MASW-003103-13640G M/A-Com Technology Solutions, MASW-003103-13640G Datasheet - Page 2

• Manufacturer Part Number: MASW-003103-13640G
• Description: SILICON PIN DIODE SPDT SWITCH
• Manufacturer: M/A-Com Technology Solutions

2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
HMIC
50 MHz - 20 GHz
Electrical Specifications: T
MASW-003103-1364
4.
5.
Functional Schematic
Input 0.1dB Compression Point
J2
Output to Output Isolation
Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers.
Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.
TM
Input Return Loss
Switching Speed
Voltage Rating
Insertion Loss
Silicon PIN Diode SP3T Switch
Parameter
Isolation
5
4
J1
J3
A
= 25°C, P
J4
IN
= 0 dBm, Z
Frequency
13 GHz
20 GHz
13 GHz
20 GHz
13 GHz
20 GHz
13 GHz
20 GHz
6 GHz
6 GHz
6 GHz
6 GHz
2 GHz
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M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
6.
7.
Absolute Maximum Ratings
Max Operating Conditions for combination RF
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per
Diode @ 85ºC
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are rated at Class 1A Human Body.
Proper ESD control techniques should be used
when handling these devices.
Applied Reverse Voltage
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• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Operating Temperature
RF CW Incident Power
Junction Temperature
Visit www.macomtech.com for additional data sheets and product information.
Storage Temperature
0
Bias Current +25°C
Exceeding any one or combination of these limits may cause
permanent damage to this device.
M/A-COM does not recommend sustained operation near
these survivability limits.
= 50 Ω, 20mA/-10V
Parameter
Units
dBm
dB
dB
dB
dB
ns
V
33dBm CW @ 20GHz, 25°C
38dBm CW @ 2GHz, 25°C
Absolute Maximum
Min.
-65 °C to +125 °C
-65 °C to +150 °C
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50
37
25
19
14
14
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+175 °C
± 50 mA
|-80 V|
6,7
Typ.
0.50
0.8
1.2
54
40
31
25
22
21
57
42
30
20
36
—
Rev. V6P
Max.
0.6
1.1
1.4
80
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