DF01M-E3/45 Vishay, DF01M-E3/45 Datasheet - Page 3
![Diode Rectifier Bridge Single 100V 1A 4-Pin Case DFM Tube](/photos/16/3/160389/dfm_sml.jpg)
DF01M-E3/45
Manufacturer Part Number
DF01M-E3/45
Description
Diode Rectifier Bridge Single 100V 1A 4-Pin Case DFM Tube
Manufacturer
Vishay
Datasheet
1.DF005M-E345.pdf
(4 pages)
Specifications of DF01M-E3/45
Package
4Case DFM
Peak Average Forward Current
1@Ta=40C A
Peak Forward Voltage
1.1 V
Peak Reverse Current
5 uA
Peak Reverse Repetitive Voltage
100 V
Bridge Type
Single Phase
Configuration
Single
Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-EDIP (0.300", 7.62mm)
Product
Single Phase Bridge
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF01M-E3/45
Manufacturer:
SAMSUNG
Quantity:
230
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88571
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3