Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @ T
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
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Notes:
DS30796 Rev. 6 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCP53)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
4. Pulse Test: Pulse width = ≤300μs, Duty Cycle ≤ 2%.
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
A
= 25ºC (Note 3)
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
DCP56-16
= 25°C (Note 3)
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE (ON)
I
I
h
CBO
EBO
f
FE
1 of 4
T
Symbol
Symbol
T
V
V
V
j
, T
R
P
CBO
CEO
EBO
I
Min
100
100
θ JA
5.0
C
80
—
25
40
25
—
—
—
—
d
STG
C
Typ
160
200
—
—
—
—
—
—
—
—
—
—
TOP VIEW
4
Schematic and Pin Configuration
NPN SURFACE MOUNT TRANSISTOR
Max
250
250
0.1
0.5
1.0
—
—
—
20
10
—
—
—
3
2
1
-55 to 150
4
Value
Value
C
B
E
100
125
80
5
1
1
MHz
SOT-223
Unit
μA
μA
—
V
V
V
V
V
3
I
I
I
V
V
V
I
I
I
I
I
I
I
f = 100MHz
C
C
E
C
C
C
C
C
C
C
DCP56/-16
CB
CB
EB
BASE
= 10mA, I
= 10μA, I
= 500mA, I
= 500mA, V
= 100μA, I
= 5.0mA, V
= 150mA, V
= 500mA, V
= 150mA, V
= 50mA, V
COLLECTOR
2
= 30V, I
= 30V, I
= 5.0V, I
1
1
EMITTER
Test Condition
2,4
B
C
E
E
3
E
C
CE
B
= 0
= 0
= 0
= 0,T
CE
© Diodes Incorporated
= 0
= 0
CE
CE
CE
CE
= 50mA
Units
°C/W
Unit
= 5.0V,
°C
W
= 2.0V
V
V
V
A
= 2.0V
= 2.0V
= 2.0V
= 2.0V
A
DCP56/-16
= 150°C