ZXT10N50DE6TA Diodes Zetex, ZXT10N50DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXT10N50DE6TA
• Description: TRANS SW NPN LO SAT 50V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXT10N50DE6TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 165MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXT10N50DE6TATR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
ZXT10N50DE6
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
50
50
5
200
300
200
100
100
= 25°C unless otherwise stated).
4
TYP.
190
65
8.3
400
450
400
225
12
170
750
115
225
0.88
40
145
0.93
165
14
2%
MAX.
100
100
100
200
200
300
1.0
0.95
20
20
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ISSUE 1 - SEPTEMBER 2000
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
CC
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=2A, I
=3A, I
=3A, I
=3A, V
=10mA, V
=0.2A, V
=1A, V
=2A, V
=6A, V
=50mA, V
=I
=4V
=40V
=10V, f=1MHz
=10V, I
B2
=40V
=10mA
B
B
B
B
CE
CE
CE
CE
=10mA*
=50mA*
=100mA*
=100mA*
B
CE
=10mA*
=2V*
=2V*
=2V*
=2V*
C
CE
CE
=1A
=2V*
=2V*
=10V