BC337 Fairchild Semiconductor, BC337 Datasheet - Page 2

• Manufacturer Part Number: BC337
• Description: TRANSISTOR NPN 45V 800MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BC337

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ON CHARACTERISTICS
OFF CHARACTERISTICS
h
V
V
Symbol
V
V
V
I
I
CBO
EBO
FE
CE(
BE(
(BR)CEO
(BR)CES
(BR)EBO
Electrical Characteristics
on
sat
)
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Em itter Breakdown
Voltage
Collector-Base Breakdown Voltage
Em itter-Base Breakdown Voltage
Collector Cutoff Current
Em itter Cutoff Current
Parameter
TA = 25°C unless otherwise noted
V
V
V
I
I
I
I
V
V
V
C
C
C
E
C
CE
CE
CE
CB
CB
EB
= 500 mA, I
= 100 A, I
= 10 m A, I
= 100 A, I
= 1.0 V, I
= 1.0 V, I
= 1.0 V, I
= 5.0 V, I
= 20 V, I
= 20 V, I
Test Conditions
C
C
C
B
E
E
B
E
C
C
= 100 mA
= 500 mA
= 500 mA
= 0
= 0, T
= 0, T
= 50 mA
= 0
= 0
= 0
NPN General Purpose Amplifier
A
A
= +25 C
= +150
337-16
337-25
Min
100
160
5.0
40
45
50
Max
250
400
100
5.0
0.7
1.2
10
(continued)
Units
nA
V
V
V
V
V
A
A