PN3567 Fairchild Semiconductor, PN3567 Datasheet
PN3567
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PN3567 Summary of contents
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... Collector-Emitter Saturation Voltage * CE V (on) Base-Emitter On Voltage BE Small Signal Characteristics C Output Capacitance obo C Input Capacitance ibo * Pulse Test: Pulse Width 300ms, Duty Cycle ©2002 Fairchild Semiconductor Corporation PN3567 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 30mA 100 A, I ...
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... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 625 mW 5 mW/ C 83.3 C/W 200 C/W Rev. A1, November 2002 ...
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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, November 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...