TIP110 Fairchild Semiconductor, TIP110 Datasheet - Page 3

• Manufacturer Part Number: TIP110
• Description: TRANS NPN DARL 60V 2A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP110

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 8mA, 2A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 1A, 4V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 2 A
• Maximum Collector Cut-off Current: 1000 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TIP110/TIP111/TIP112 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Base-Emitter Saturation Voltage
0.1
100
10
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
1
0.01
Collector-Emitter Saturation Voltage
1
0
I
I
B
B
Figure 1. Static Characteristic
I
Figure 5. Safe Operating Area
= 400
= 450
B
V
= 500
CE
m
[V], COLLECTOR-EMITTER VOLTAGE
m
V
A
A
m
1
CE
A
I
[V], COLLECTOR-EMITTER VOLTAGE
C
[A], COLLECTOR CURRENT
0.1
2
10
V
BE
V
(sat)
CE
(sat)
TIP 110
TIP 111
TIP 112
3
1
I
B
= 150
I
C
4
I
B
= 500 I
100
= 200
m
A
m
B
A
10
5
3
10000
1000
1000
100
100
10
80
70
60
50
40
30
20
10
10
Figure 4. Collector Output Capacitance
1
0.01
0
0.01
0
Figure 2. DC current Gain
25
Figure 6. Power Derating
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
0.1
C
T
[A], COLLECTOR CURRENT
50
C
[
o
C], CASE TEMPERATURE
0.1
75
1
100
1
125
10
f = 0.1 MHz
V
150
CE
= 4V
www.fairchildsemi.com
100
175
10