TIP120 Fairchild Semiconductor, TIP120 Datasheet - Page 3

• Manufacturer Part Number: TIP120
• Description: TRANS NPN DARL 60V 5A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP120

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 4V @ 20mA, 5A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 3A, 3V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 5 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TIP120/TIP121/TIP122 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Typical characteristics
10000
1000
1000
100
100
Figure 3. Output and Input Capacitance
10
80
70
60
50
40
30
20
10
0
0.1
0.1
0
Figure 1. DC current Gain
25
V
Figure 5. Power Derating
CB
V
[V], COLLECTOR-BASE VOLTAGE
EB
vs. Reverse Voltage
I
[V], EMITTER-BASE VOLTAGE
C
[A], COLLECTOR CURRENT
T
50
C
[
o
C], CASE TEMPERATURE
1
75
1
100
C
ib
10
125
V
150
f=0.1MHz
CE
= 4V
C
ob
175
100
10
3
0.01
Figure 2. Base-Emitter Saturation Voltage
0.1
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
1
0.1
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
V
V
BE
CE
(sat)
(sat)
10
1
TIP122
TIP120
TIP121
I
C
= 250I
100
www.fairchildsemi.com
B
10