BC817-16,215 NXP Semiconductors, BC817-16,215 Datasheet - Page 4

• Manufacturer Part Number: BC817-16,215
• Description: TRANSISTOR NPN 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC817-16,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4865-2; 933628620215; BC817-16 T/R; BC817-16 T/R; BC817-16,215

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC817_BC817W_BC337_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
BC817
BC817W
BC337
BC817
BC817W
BC337
Rev. 06 — 17 November 2009
BC817; BC817W; BC337
Conditions
open emitter
open base;
I
open collector
T
T
T
Conditions
T
T
T
C
amb
amb
amb
amb
amb
amb
45 V, 500 mA NPN general-purpose transistors
= 10 mA
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
-
-
−65
-
−65
Min
-
-
-
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
50
45
5
500
1
200
250
200
625
+150
150
+150
Max
500
625
200
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
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