BSP62,115 NXP Semiconductors, BSP62,115 Datasheet

TRANS PNP 80V 500MA SOT223

BSP62,115

Manufacturer Part Number
BSP62,115
Description
TRANS PNP 80V 500MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BSP62,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.25W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
90 V
Maximum Dc Collector Current
1 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 1 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933969480115
BSP62 T/R
BSP62 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP62,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 29
DATA SHEET
handbook, halfpage
BSP60; BSP61; BSP62
PNP Darlington transistors
M3D087
DISCRETE SEMICONDUCTORS
2001 May 31

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BSP62,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage BSP60; BSP61; BSP62 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 29 DISCRETE SEMICONDUCTORS M3D087 2001 May 31 ...

Page 2

... NXP Semiconductors PNP Darlington transistors FEATURES • High current (max. 0.5 A) • Low voltage (max • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp drivers. DESCRIPTION PNP Darlington transistor in a SOT223 plastic package. ...

Page 3

... NXP Semiconductors PNP Darlington transistors THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to solder point th j-s Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook” ...

Page 4

... NXP Semiconductors PNP Darlington transistors 6000 handbook, full pagewidth h FE 5000 4000 3000 2000 1000 0 −1 −10 = − handbook, full pagewidth = − 200 μ μ Ω kΩ kΩ −10 1 Ω. Oscilloscope: input impedance Z i 2001 May 31 −1 −10 Fig.2 DC current gain; typical values. ...

Page 5

... NXP Semiconductors PNP Darlington transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 2001 May scale 0.32 6.7 3 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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