MJD44H11T4 STMicroelectronics, MJD44H11T4 Datasheet - Page 2

• Manufacturer Part Number: MJD44H11T4
• Description: TRANSISTOR NPN 80V 8A DPAK
• Manufacturer: STMicroelectronics
• Type: Amplifier, Switchr

Specifications of MJD44H11T4

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Collector: -8 A
• Current, Gain: 60
• Package Type: TO-252
• Polarity: PNP
• Power Dissipation: 20 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -1 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2504-2

MJD44H11 / MJD45H11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
Safe Operating Area
V
Pulsed: Pulse duration = 300 s, duty cycle
For PNP types the values are intented negative.
V
Symbol
V
R
CEO(sus)
CE(sat)
BE(sat)
thj-case
h
I
I
CES
EBO
FE
Thermal Resistance Junction-case
Collector-Emitter
Sustaining Voltage
Collector Cut-off
Current
Emitter Cut-off Current V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Parameter
2 %
I
V
I
I
I
I
C
C
C
C
C
CB
EB
= 30 mA
= 8 A
= 8 A
= 2 A
= 4 A
= 5V
= rated V
case
= 25
Test Conditions
CEO
o
I
I
V
V
B
B
C unless otherwise specified)
CE
CE
= 0.4 A
= 0.8 A
V
= 1 V
= 1 V
Derating Curves
BE
= 0
Max
Min.
80
60
40
Typ.
6.25
Max.
1.5
10
50
1
o
Unit
C/W
V
V
V
A
A