STBV42G STMicroelectronics, STBV42G Datasheet - Page 3

• Manufacturer Part Number: STBV42G
• Description: TRANSISTOR NPN 400V 1A TO-92
• Manufacturer: STMicroelectronics

Specifications of STBV42G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 250mA, 750mA
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 400mA, 5V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8888

2
2.1
Electrical characteristics
(T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristics (curves)
V
Figure 2.
V
V
CEO(sus)
Symbol
C
CE(sat)
BE(sat)
h
I
I
= 25 °C; unless otherwise specified)
EBO
FE
CES
t
f
(1)
(1)
(1)
(1)
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter sustaining
voltage (I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
Inductive Load
Fall time
Electrical characteristics
C
Safe operating area
BE
= 0)
= 0)
B
Parameter
= 0)
Doc ID 7232 Rev 6
V
V
V
I
I
I
I
I
I
I
I
I
I
I
L = 3 mH
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
EB
= 1 mA
= 0.25 A
= 0.5 A
= 0.75 A
= 0.25 A
= 0.5 A
= 0.5 mA
= 0.4 A
= 0.8 A
= 0.25 A
= -I
= 9 V
= 700 V
= 700 V
B2
Figure 3.
Test conditions
= 50 mA
_
I
I
I
I
I
V
V
V
V
B
B
B
B
B
Figure 9
CE
CE
CE
clamp
= 50 mA
= 125 mA
= 250 mA
= 50 mA
= 125 mA
T
C
= 2 V
= 5 V
= 5 V
Derating curve
= 125 °C
= 300 V
Min. Typ. Max. Unit
400
12
10
5
0.2
0.3
0.4
0.3
0.5
1.5
1.2
30
20
1
5
1
1
1
mA
mA
mA
3/10
µs
V
V
V
V
V
V