STBV42G STMicroelectronics, STBV42G Datasheet - Page 3
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STBV42G
Manufacturer Part Number
STBV42G
Description
TRANSISTOR NPN 400V 1A TO-92
Manufacturer
STMicroelectronics
Datasheet
1.STBV42G.pdf
(10 pages)
Specifications of STBV42G
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1.5V @ 250mA, 750mA
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 400mA, 5V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Details
Other names
497-8888
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
2
2.1
Electrical characteristics
(T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristics (curves)
V
Figure 2.
V
V
CEO(sus)
Symbol
C
CE(sat)
BE(sat)
h
I
I
= 25 °C; unless otherwise specified)
EBO
FE
CES
t
f
(1)
(1)
(1)
(1)
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter sustaining
voltage (I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
Inductive Load
Fall time
Electrical characteristics
C
Safe operating area
BE
= 0)
= 0)
B
Parameter
= 0)
Doc ID 7232 Rev 6
V
V
V
I
I
I
I
I
I
I
I
I
I
I
L = 3 mH
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
EB
= 1 mA
= 0.25 A
= 0.5 A
= 0.75 A
= 0.25 A
= 0.5 A
= 0.5 mA
= 0.4 A
= 0.8 A
= 0.25 A
= -I
= 9 V
= 700 V
= 700 V
B2
Figure 3.
Test conditions
= 50 mA
_
I
I
I
I
I
V
V
V
V
B
B
B
B
B
Figure 9
CE
CE
CE
clamp
= 50 mA
= 125 mA
= 250 mA
= 50 mA
= 125 mA
T
C
= 2 V
= 5 V
= 5 V
Derating curve
= 125 °C
= 300 V
Min. Typ. Max. Unit
400
12
10
5
0.2
0.3
0.4
0.3
0.5
1.5
1.2
30
20
1
5
1
1
1
mA
mA
mA
3/10
µs
V
V
V
V
V
V