Specifications of 2N2222A
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
500mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-18-3, TO-206AA, Metal Case
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
75V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
100
Power Dissipation
500mW
Frequency (max)
300MHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Package
3TO-18
Supplier Package
TO-18
Minimum Dc Current Gain
35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V
Maximum Operating Frequency
300(Typ) MHz
Maximum Dc Collector Current
0.6 A
Maximum Base Emitter Saturation Voltage
1.2@15mA@150mA|2@50mA@500mA V
Maximum Collector Emitter Saturation Voltage
0.3@15mA@150mA|1@50mA@500mA V
Maximum Collector Base Voltage
75 V
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
6 V
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Dc Collector/base Gain Hfe Min
40
Current, Collector
0.6 A
Current, Collector Cutoff
10 nA
Current, Gain
300
Frequency
300 MHz
Gain, Dc Current, Maximum
300
Gain, Dc Current, Minimum
35
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature, Operating, Maximum
175 °C
Thermal Resistance, Junction To Ambient
300 °C⁄W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
1 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
497-2598
497-2598-5
497-2598-5
... DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage ...
... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEX Current (V = -3V Base Cut-off Current BEX (V = -3V Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ...
... Rise Time r t Storage Time s t Fall Time Feedback Time bb’ b’c Constant Pulsed: Pulse duration = 300 s, duty cycle See test circuit Test Conditions 1KHz 150 -0 150 -0 150 150 31.8MHz 1 % 2N2219A / 2N2222A Min. Typ. Max. Unit 0.25 1. 200 225 150 ps 3/7 ...
... TO-18 MECHANICAL DATA DIM. MIN 2. TYP. MAX. MIN. 12.7 0.49 5.3 4.9 5.8 0.100 1.2 1.16 L 2N2219A / 2N2222A inch TYP. MAX. 0.500 0.019 0.208 0.193 0.228 0.047 0.045 0016043 5/7 ...