BUL38D STMicroelectronics, BUL38D Datasheet - Page 2

• Manufacturer Part Number: BUL38D
• Description: TRANSISTOR NPN 450V 10A TO-220
• Manufacturer: STMicroelectronics
• Type: High Voltage, Power, Switchr

Specifications of BUL38D

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 750mA, 3A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 10mA, 5V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 10
• Current, Collector: 5 A
• Current, Gain: 60
• Package Type: TO-220
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Voltage, Breakdown, Collector To Emitter: 450 V
• Voltage, Collector To Emitter: 450 V
• Voltage, Collector To Emitter, Saturation: 1.1 V
• Voltage, Emitter To Base: 9 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2581-5

BUL38D
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
2/7
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
V
V
Symbol
R
R
CEO(sus)
CE(sat)
BE(sat)
V
thj-case
h
I
thj-amb
I
CEO
CES
EBO
FE
V
t
t
t
t
t
t
s
s
s
f
f
f
f
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Collector-Emitter
Sustaining Voltage
(I
Emitter-Base Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage I
B
C
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
Group A
Group B
I
I
(see figure 2)
I
V
V
(see figure 1)
I
V
V
T
C
E
C
C
C
C
C
C
C
C
C
B1
C
C
C
c
CE
CE
CE
BE(off)
CL
BE(off)
CL
= 10 mA
= 100 mA
= 1 A
= 2 A
= 3 A
= 1 A
= 2 A
= 10 mA
= 0.5 A
= 2 A
= 2.5 A
= 2 A
= 2 A
= 2 A
= 125
= -I
= 250 V
= 250 V
= 800 V
= 800 V
= 450 V
case
B2
= -5 V
= -5 V
= 25
o
= 0.5 A
Test Conditions
C
o
C unless otherwise specified)
(see figure 1)
I
R
L = 200 H
R
L = 200 H
Max
I
B1
Max
V
V
V
t
B1
T
V
BB
BB
I
I
I
I
I
p
L = 25 mH
B
B
B
B
B
CE
CC
CE
c
CE
= 0.4 A
= 30 s
= 0.4 A
= 0.2 A
= 0.4 A
= 0.75 A
= 0.2 A
= 0.4 A
= 0
= 0
= 125
= 5 V
= 5 V
= 150 V
= 5 V
o
C
Min.
450
1.0
10
13
22
9
1.56
62.5
Typ.
100
1.3
55
1
Max.
100
500
250
100
0.5
0.7
1.1
1.1
1.2
2.2
0.8
1.8
1.5
60
23
32
o
o
Unit
C/W
C/W
ns
ns
V
V
V
V
V
V
V
V
A
A
A
s
s
s
s