2N5415 STMicroelectronics, 2N5415 Datasheet - Page 4

• Manufacturer Part Number: 2N5415
• Description: TRANSISTOR PNP -200V -1A TO-39
• Manufacturer: STMicroelectronics
• Type: Driver, High Voltage, Switchr

Specifications of 2N5415

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 200V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 5mA, 50mA
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 1W
• Frequency - Transition: 15MHz
• Mounting Type: Through Hole
• Package / Case: TO-39-3, TO-205AD, Metal Can
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 200 V
• Emitter- Base Voltage Vebo: - 4 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 10 W
• Maximum Operating Frequency: 15 MHz
• Dc Collector/base Gain Hfe Min: 30
• Current, Base: -0.5 A
• Current, Collector: -1 A
• Current, Collector Cutoff: -50 μA (Max.) @ VCB ≥ -175 V
• Current, Gain: 150
• Frequency: 15 MHz
• Gain, Dc Current, Maximum: 150
• Gain, Dc Current, Minimum: 30
• Package Type: TO-39
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 17.5 °C/W
• Voltage, Breakdown, Collector To Emitter: -200 V
• Voltage, Collector To Base: -200 V
• Voltage, Collector To Emitter: -200 V
• Voltage, Collector To Emitter, Saturation: -2.5 V
• Voltage, Emitter To Base: -4 V
• Voltage, Saturation, Collector To Emitter: -2.5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 200V
• Collector-base Voltage: 200V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 30
• Frequency (max): 15MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2593-5

2N5415 / 2N5416
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