2N2102 STMicroelectronics, 2N2102 Datasheet

TRANSISTOR NPN 120V 1A TO-39

2N2102

Manufacturer Part Number
2N2102
Description
TRANSISTOR NPN 120V 1A TO-39
Manufacturer
STMicroelectronics
Type
Amplifier, General Purposer
Datasheets

Specifications of 2N2102

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
500mV @ 15mA, 150mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Current, Collector
1 A
Current, Collector Cutoff
2 nA
Current, Gain
120
Package Type
TO-39
Polarity
NPN
Power Dissipation
5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
30 °C/W
Temperature, Operating, Maximum
175 °C
Thermal Resistance, Junction To Ambient
150 °C/W
Voltage, Breakdown, Collector To Base
120 V
Voltage, Breakdown, Collector To Emitter
65 V
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
65 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
7 V
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
65V
Power Dissipation Pd
1W
Dc Collector Current
1A
Dc Current Gain Hfe
40
No. Of Pins
3
Collector Current @ Hfe
150mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
497-2636-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N2102
Manufacturer:
MOT
Quantity:
525
Part Number:
2N2102
Manufacturer:
STM
Quantity:
2 008
Part Number:
2N2102
Manufacturer:
ST
Quantity:
500
Part Number:
2N2102
Manufacturer:
ST
Quantity:
606
Part Number:
2N2102
Manufacturer:
ST
Quantity:
753
Part Number:
2N2102
Manufacturer:
ST
0
Part Number:
2N2102
Manufacturer:
ST
Quantity:
20 000
Part Number:
2N2102 B50-70
Manufacturer:
ST
0
Part Number:
2N2102 B80-110
Manufacturer:
ST
0
DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intended for a wide variety of small-signall and
medium power
industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
GENERAL PURPOSE AMPLIFIER AND
SWITCH
V
V
V
V
T
P
CBO
CEO
CER
EBO
I
T
stg
C
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Collector-Emitter Voltage (R
Emitter-Base Voltage (I
Collector Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
applications in military and
at T
Parameter
amb
C
C
E
= 0)
25
= 0)
25
B
BE
o
= 0)
C
o
C
10 )
EPITAXIAL PLANAR NPN
INTERNAL SCHEMATIC DIAGRAM
-65 to 175
Value
120
175
TO-39
65
80
7
1
1
5
2N2102
Unit
o
o
W
W
V
V
V
V
A
C
C
1/4

Related parts for 2N2102

2N2102 Summary of contents

Page 1

... GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case intended for a wide variety of small-signall and medium power applications in military and industrial equipments. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N2102 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...

Related keywords