2N3772 STMicroelectronics, 2N3772 Datasheet

TRANSISTOR NPN 60V 20A TO-3

2N3772

Manufacturer Part Number
2N3772
Description
TRANSISTOR NPN 60V 20A TO-3
Manufacturer
STMicroelectronics
Type
Amplifier, High Powerr
Datasheets

Specifications of 2N3772

Transistor Type
NPN
Current - Collector (ic) (max)
20A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
4V @ 4A, 20A
Current - Collector Cutoff (max)
10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 10A, 4V
Power - Max
150W
Frequency - Transition
200kHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
20 A
Power Dissipation
150 W
Continuous Collector Current
20 A
Dc Collector/base Gain Hfe Min
5
Maximum Operating Frequency
0.2 MHz
Current, Collector
20 A
Current, Gain
60
Frequency
0.2 MHz
Package Type
TO-3
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2597-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3772
Manufacturer:
PECOR
Quantity:
41
Part Number:
2N3772
Manufacturer:
ST
0
Part Number:
2N3772G
Manufacturer:
ON/安森美
Quantity:
20 000
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPES
V
V
V
V
T
P
I
I
CEO
CEV
CBO
EBO
I
CM
I
BM
stg
C
B
tot
Collector-Emitter Voltage (I
Collector-Emitter Voltage (V
Collector-Base Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
Storage Temperature
®
HIGH POWER NPN SILICON TRANSISTOR
Parameter
c
C
25
B
= 0)
= 0)
E
BE
o
C
= 0)
= -1.5V)
INTERNAL SCHEMATIC DIAGRAM
2N3771
7.5
30
30
15
40
50
50
5
-65 to 200
1
Value
150
TO-3
2
2N3772
100
60
80
20
30
15
7
5
2N3771
2N3772
Unit
o
W
V
V
V
V
A
A
A
A
C
1/4

Related parts for 2N3772

2N3772 Summary of contents

Page 1

... HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I ...

Page 2

... CB j for 2N3771 for 2N3772 for 2N3771 for 2N3772 V = 100 V CB for 2N3771 for 2N3772 0 for 2N3771 for 2N3772 100 C BE for 2N3771 for 2N3772 for 2N3771 for 2N3772 for 2N3771 1 for 2N3772 for 2N3771 for 2N3772 for 2N3771 I ...

Page 3

... R 4.00 U 38.50 V 30.00 TO-3 MECHANICAL DATA mm TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30. 2N3771/2N3772 inch MIN. TYP. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 P003F MAX. 0.516 0.045 0.065 0.351 0.787 ...

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